Reduced damage of electron cyclotron resonance etching by In doping into p-GaN

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 350-355

  Makimoto, Toshiki ^a   Kumakura, Kazuhide ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; ETCHING; GOLD; NICKEL; OHMIC CONTACTS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034510683     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00712-0     Document Type: Article

References (12)

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