Investigation of surface properties of Si-doped GaN films by electric force microscopy and photoluminescence

Solid State Communications

Volumn 130, Issue 1-2, 2004, Pages 49-52

  Lin, T Y ^a   Su, W S ^a,b   Chen, Y F ^b  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A. III V semiconductors; D. Optical properties; D. Surface states

Indexed keywords

DOPING (ADDITIVES); ELECTROSTATICS; ENERGY GAP; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PASSIVATION; PERMITTIVITY; PHOTOLUMINESCENCE; SILICON; SURFACE PROPERTIES; THIN FILMS;

ELECTRIC FORCE MICROSCOPY (EFM); III-V SEMICONDUCTORS; SURFACE STATES;

GALLIUM NITRIDE;

EID: 1442310440     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.01.011     Document Type: Article

References (21)

1. Morkoc H. Nitride Semiconductors and Devices. 1999;Springer, Berlin.
2. Gil B. Group III Nitride Semiconductor Compounds: Physics and Applications. 1998;Clarendon Press, Oxford.
3. Narukawa Y., Kawakami Y., Fujita S., Nakamura S. Phys. Rev. 59:1999;10283.
4. Waltereit P., Brandt O., Ringling J., Ploog H. Phys. Rev. 64:2001;245305.
5. Ho I., Stringfellow G.B. Appl. Phys. Lett. 69:1996;2701.
6. Bernardini F., Fiorentini V., Vanderbilt D. Phys. Rev. B. 63:2001;193201.
7. Krystek W., Pollak F.H., Feng Z.C., Schurman M., Stall R.A. Appl. Phys. Lett. 72:1998;1353.
8. Oh E., Kim B., Park H., Park Y. Appl. Phys. Lett. 73:1998;1883.
9. Reshchikov M.A., Visconti P., Jones K.M., Morkoc H. Mater. Res. Soc. Symp. Proc. 680E:2001;E5.4.
10. Song J.O., Park S.J., Seong T.Y. Appl. Phys. Lett. 80:2002;3129.
11. Reshchikov M.A., Zafar Iqbal M., Morkoc H., Park S.S., Lee K.Y. Appl. Phys. Lett. 83:2003;266.
12. Jones K.M., Visconti P., Yun F., Baski A.A., Morkoc H. Appl. Phys. Lett. 78:2001;2497.
13. Bridger P.M., Bandic Z.Z., Piquette E.C., McGill T.C. Appl. Phys. Lett. 74:1999;3522.
14. Koley G., Spencer M.G. J. Appl. Phys. 90:2001;337.
15. Hsu J.W.P., Ng H.M., Sergent A.M., Chu S.N.G. Appl. Phys. Lett. 81:2002;3579.
16. Simpkins B.S., Schaadt D.M., Yu E.T., Molnar R.J. J. Appl. Phys. 91:2002;9924.
17. Terris B.D., Stern J.E., Rugar D., Mamin H.J. Phys. Rev. Lett. 63:1989;2669.
18. Wu C.I., Kahn A., Taskar N., Dorman D., Gallagher D. J. Appl. Phys. 83:1998;4249.
19. Sze S.M. Physics of Semiconductor Devices. 1981;Wiley, New York. pp. 270-275.
20. Yang H.C., Lin T.Y., Huang M.Y., Chen Y.F. J. Appl. Phys. 86:1999;6124.
21. Shmidt N.M., Emtsev V.V., Kryzhanovsky A.S., Kyutt R.N., Lundin W.V., Poloskin D.S., Ratnikov V.V., Sakharov A.V., Titkov A.N., Usikov A.S., Girard P. Phys. Stat. Sol. (b). 216:1999;581.