Electric-field effects on persistent photoconductivity in undoped n-type epitaxial GaN

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Xu, Jintong ^a   You, Da ^a   Tang, Yingwen ^a   Kang, Yong ^a   Li, Xue ^a   Li, Xiangyang ^a   Gong, Haimei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-VOLTAGE PULSES; PERSISTENT PHOTOCONDUCTIVITY (PPC); TRAPPING PARAMETERS; UNDOPED N-TYPE EPITAXIAL GAN;

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; PARAMETER ESTIMATION; PHOTOCONDUCTIVITY;

ELECTRIC FIELD EFFECTS;

EID: 32944456302     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2174841     Document Type: Article

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