Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4164-4171

  Cho, Seongjae ^a   Lee, Jae Sung ^b   Kim, Kyung Rok ^c   Park, Byung Gook ^a,d   Harris Jr , James S ^a   Kang, In Man ^b  

^a Stanford University   (United States)

^b Kyungpook National University   (South Korea)

^c Ulsan National Institute of Science and Technology   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

Gate all around (GAA); modeling; nonquasi static (NQS); radio frequency (RF); small signal parameters; technology computer aided design (TCAD); tunneling field effect transistor (TFET)

Indexed keywords

GATE-ALL-AROUND; NON QUASI STATIC; RADIO-FREQUENCY (RF); SMALL-SIGNAL PARAMETERS; TECHNOLOGY COMPUTER-AIDED DESIGN (TCAD); TUNNELING FIELD-EFFECT TRANSISTOR (TFET);

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CUTOFF FREQUENCY; GALLIUM ALLOYS; MODELS;

FIELD EFFECT TRANSISTORS;

EID: 82155195856     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2167335     Document Type: Article

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