A SPICE-compatible new silicon nanowire field-effect transistors (SNWFETs) model

IEEE Transactions on Nanotechnology

Volumn 8, Issue 5, 2009, Pages 643-649

  Lee, Se Han ^a   Yu, Yun Seop ^b   Hwang, Sung Woo ^c   Ahn, Doyeol ^d  

^a Hanyang University   (South Korea)

^b Hankyong National University   (South Korea)

^c Korea University   (South Korea)

^d University of Seoul   (South Korea)

Author keywords

Barrier lowering effects; Nanowire (NW) FET; Schottky diode; SPICE; Thermionic emission (TE); Thermionic field emission (TFE)

Indexed keywords

BARRIER LOWERING EFFECTS; COMPACT MODEL; DRAIN-SOURCE VOLTAGE; FORWARD BIAS; GATE VOLTAGES; METAL-SEMICONDUCTOR CONTACTS; MOSFET MODEL; NANOWIRE (NW) FET; REVERSE BIAS; SCHOTTKY; SCHOTTKY BARRIER HEIGHT MODELS; SCHOTTKY CONTACTS; SCHOTTKY DIODE; SCHOTTKY DIODES; SILICON NANOWIRE FETS; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SOURCE AND DRAINS; THERMIONIC FIELD EMISSION; THERMIONIC FIELD EMISSION (TFE);

CARRIER MOBILITY; CIRCUIT SIMULATION; DIODES; FIELD EFFECT TRANSISTORS; FIELD EMISSION; MESFET DEVICES; NANOWIRES; SCHOTTKY BARRIER DIODES; SPICE; THERMIONIC EMISSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349333942     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2019724     Document Type: Article

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