RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1388-1396

  Cho, Seongjae ^a   Kim, Kyung Rok ^b   Park, Byung Gook ^a   Kang, In Man ^c  

^a STANFORD UNIVERSITY   (United States)

^b Ulsan National Institute of Science and Technology   (South Korea)

^c Kyungpook National University   (South Korea)

Author keywords

Device simulation; junctionless (JL); metaloxidesemiconductor field effect transistor (MOSFET); modeling; non quasi static (NQS); parameter extraction; radio frequency (RF); silicon nanowire (SNW)

Indexed keywords

DEVICE SIMULATIONS; JUNCTIONLESS (JL); METALOXIDESEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET); MODELING; NON QUASI STATIC; RADIO FREQUENCY (RF); SILICON NANOWIRE (SNW);

CAPACITANCE; CUTOFF FREQUENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; NANOWIRES; PARAMETER EXTRACTION; RADIO; RADIO WAVES; SEMICONDUCTING SILICON COMPOUNDS; THREE DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 79955543452     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2109724     Document Type: Article

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