A comprehensive study on the FIBL of nanoscale MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 10, 2004, Pages 1733-1735

  Tsui, Bing Yue ^a   Chin, Li Feng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; PERMITTIVITY; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CONDUCTIVE SPACER; FRINGING INDUCED BARRIER LOWERING (FIBL); HIGH DIELECTRIC CONSTANT MATERIAL; MINIMUM GATE DRAIN; SHORT SIDEWALL SPACER; STACK GATE DIELECTRIC;

MOSFET DEVICES;

EID: 5444234969     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.835022     Document Type: Article

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