Multi-gate devices for the 32nm technology node and beyond

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 143-146

  Collaert, N ^a   De Keersgieter, A ^a   Dixit, A ^b   Ferain, I ^b   Lai, L S ^c   Lenoble, D ^d   Mercha, A ^a   Nackaerts, A ^a   Pawlak, B J ^e   Rooyackers, R ^a   Schulz, T ^f   San, K T ^g   Son, N J ^h   Van Dal, M J H ^e   Verheyen, P ^a   Von Arnim, K ^f   Witters, L ^a   De Meyer, K ^b   Biesemans, S ^a   Jurczak, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC ^*

^d STMICROELECTRONICS   (Italy)

^e NXP SEMICONDUCTORS   (Netherlands)

^f INFINEON TECHNOLOGIES AG   (Germany)

^g TEXAS INSTRUMENTS   (United States)

^h SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; LEAKAGE CURRENTS; MOSFET DEVICES; NANOELECTRONICS;

MULTI GATE DEVICES; PLANAR BULK DEVICES;

GATE DIELECTRICS;

EID: 39549119968     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430899     Document Type: Conference Paper

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