Electrical characteristics of FinFET with vertically nonuniform source/drain doping profile

IEEE Transactions on Nanotechnology

Volumn 1, Issue 4, 2002, Pages 233-236

  Woo, Dong Soo ^b,c   Lee, Jong Ho ^b   Choi, Woo Young ^b,c   Choi, Byung Yong ^b   Choi, Young Jin ^b   Lee, Jong Duk ^a,b   Park, Byung Gook ^a,b  

^a Seoul National University ^*

^b Seoul National University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

Double gate; Finfet; Nonuniform source drain (S D); Silicon on insulator (SOI)

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC PROPERTIES;

DOUBLE-GATE; FINFET; NONUNIFORM SOURCE/DRAIN (S/D); SILICON-ON-INSULATOR (SOI);

FIELD EFFECT TRANSISTORS;

EID: 4444265356     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.807373     Document Type: Conference Paper

References (6)

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