Evaluation of the switching characteristics of a gallium-nitride transistor

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 2681-2688

  Danilovic, Milisav ^a   Chen, Zheng ^a   Wang, Ruxi ^a   Luo, Fang ^a   Boroyevich, Dushan ^a   Mattavelli, Paolo ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; INDUCTIVE LOADS; LOAD CURRENTS; POWER CONVERSION; REDUCED LOSS; SILICON DIODES; SUPPLY VOLTAGES; SWITCHING CHARACTERISTICS; SWITCHING CHARACTERIZATION; SWITCHING ENERGY; SWITCHING LOSS; SWITCHING MODES; SWITCHING SPEED; TRANSISTOR JUNCTION; TURN-ON PROCESS; WEIGHT REDUCTION;

DIODES; ENERGY CONVERSION; ENERGY DISSIPATION; GALLIUM NITRIDE; INNOVATION; SWITCHING FREQUENCY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 81855206594     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6064128     Document Type: Conference Paper

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