Gallium nitride power HEMT for high switching frequency power electronics

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Volumn , Issue , 2007, Pages 781-786

  Omura, Ichiro ^a   Saito, Wataru ^a   Domon, Tomokazu ^b   Tsuda, Kunio ^a  

^a TOSHIBA CORPORATION   (Japan)

^b Life Service Company   (Japan)

Author keywords

Gallium nitride; HEMT; IGBT; Power MOSFET

Indexed keywords

DOMESTIC APPLIANCES; ELECTRIC CONDUCTIVITY; ELECTRIC POWER SUPPLIES TO APPARATUS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; NITRIDES; NONMETALS; POWER CONVERTERS; POWER ELECTRONICS; RESEARCH; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; SWITCHING; SWITCHING FREQUENCY;

AC-DC CONVERTERS; DC-DC CONVERTERS; DEVICE STRUCTURES; ELECTRONICS APPLICATIONS; FREQUENCY APPLICATIONS; GAN-HEMT; HEMT; HIGH BREAKDOWN VOLTAGE; HIGH SPEEDS; IGBT; INDUCTION HEATING SYSTEMS; MATE RIAL PROPERTIES; MOSFETS; MOTOR DRIVERS; POWER DEVICES; POWER ELECTRONICS SYSTEMS; POWER MOSFET; POWER SEMICONDUCTOR DEVICES; POWER SWITCHING; RF TECHNOLOGIES; SILICON DEVICES; WIDE-BAND GAP SEMICONDUCTORS;

SEMICONDUCTOR DEVICES;

EID: 49749132381     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWPSD.2007.4472634     Document Type: Conference Paper

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