Soft-switching performances of 1200V new punch-through IGBT using local lifetime control at high temperature

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 2001, Pages 606-611

  Azzopardi, S ^a   Kawamura, A ^b   Iwamoto, H ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; OPTIMIZATION; SWITCHING SYSTEMS;

ZERO VOLTAGE SWITCHING (ZVS);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034790401     PISSN: 02759306     EISSN: None     Source Type: Journal    
DOI: 10.1109/PESC.2001.954182     Document Type: Article

References (11)

1. Characteristics of a 1200V PT IGBT with trench gate and local life time control
2. 6.5kV IGBT modules
3. A new punch-through IGBT having a new n-buffer layer
4. Comparative investigation on power losses in soft-switching insulated gate device
5. Zero-voltage switching behaviour of punch-through and non punch-through IGBT
6. Experimenental and simulation of the PT-IGBT under ZCS operation in a special test circuit
7. Experimental investigations on the switching performances of 1200V conventional PT-IGBT and New PT-IGBT using local lifetime control for clamped inductive load without freewheeling Diode Reverse Recovery Effect
8. Internal dynamics of IGBT under zero-voltage and zero-current switching conditions
9. A study of the internal device dynamics of punch-through and non punch-through IGBT's under zero-current switching