Characterization of different IGBT's in ZVS commutation including parameter variation

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 2001, Pages 600-605

  Claudio, A ^a   Aguayo, J ^a   Cotorogea, M ^a  

^a CENTRO NACIONAL DE INVESTIGACIÓN Y DESARROLLO TECNOLÓGICO   (Mexico)

Author keywords

Circuit design; IGBT; Test circuit; Zero voltage switching (ZVS)

Indexed keywords

ELECTRIC COMMUTATION; GATES (TRANSISTOR); SEMICONDUCTOR JUNCTIONS; SWITCHING SYSTEMS;

CURRENT GRADIENT; TEST CIRCUITS; ZERO VOLTAGE SWITCHING (ZVS) COMMUTATION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034794507     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. The behaviour of homogeneous NPT-IGBTS at hard and soft switching
2. How to evaluate IGBT characteristics in operating conditions
3. Non destructive RBSOA characterization of IGBT's and MCT's
4. Dynamics behavior of punch-through IGBTs in hard-switching conveners at high temperature
5. Application of insulated gate bipolar transistor to zero-current switching converters
6. A comparative study of switching losses of IGBTs under hard switching, zero-voltage-switching and zero-current-switching
7. Switching losses of IGBTs under zero-voltage and zero-current switching
8. Internal dynamics of IGBT under zero-voltage and zero-current switching conditions