Current collapse, memory effect free GaN HEMT

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 149-152

  Wen, Cheng P ^a   Wang, Jinyan ^a   Hao, Yilong ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; BROAD BANDS; CURRENT COLLAPSE; DRAIN CURRENT DISPERSION; ELECTRIC DIPOLE; GAN HEMTS; III-NITRIDE; MEMORY EFFECTS; MICROWAVE POWER; MIS-HEMT; MOBILE HOLES; NITRIDE MATERIALS; OHMIC METALS; PEAK TO AVERAGES; POLAR SEMICONDUCTORS; POWER SATURATION; RELIABILITY AND STABILITY; RF AMPLIFIERS; ROOT CAUSE; SATURATION CURRENT DENSITIES; SIGNAL LEVEL; SIGNAL STRENGTHS; TRANSIENT EFFECT; TRANSISTOR CHANNELS; TRANSISTOR PERFORMANCE;

DRAIN CURRENT; ELECTRIC CONTACTORS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC LOSSES; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROWAVES; OHMIC CONTACTS; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957778012     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5516679     Document Type: Conference Paper

References (7)

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