Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1734-1736

  Tong, Yi ^a   Zhou, Qian ^a   Chua, Lye Hing ^b   Thanigaivelan, Thirumal ^b   Henry, Todd ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b York International Building   (Singapore)

Author keywords

Carbon; Germanium; Ion implantation; Schottky diodes; Silicides

Indexed keywords

ELECTRICAL CHARACTERISTIC; METAL/SEMICONDUCTOR INTERFACE; NICKEL SILICIDE; NISI FILMS; PRE-AMORPHIZATION IMPLANT; REVERSE CURRENTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; THRESHOLD TEMPERATURES;

CARBON; ION IMPLANTATION; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SULFUR;

GERMANIUM;

EID: 81855193998     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2167650     Document Type: Article

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