Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 731-733

  Zhang, Zhen ^a   Pagette, F ^a   D'Emic, C ^a   Yang, B ^b   Lavoie, C ^a   Zhu, Y ^a   Hopstaken, M ^a   Maurer, S ^a   Murray, C ^a   Guillorn, M ^a   Klaus, D ^a   Bucchignano, J ^a   Bruley, J ^a   Ott, J ^a   Pyzyna, A ^a   Newbury, J ^a   Song, W ^a   Chhabra, V ^a   Zuo, G ^a   Lee, K L ^a   Ozcan, A ^b   Silverman, J ^a   Ouyang, Q ^a   Park, D G ^a   Haensch, W ^a   Solomon, P M ^a   more..

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Contact resistivity; dopant segregation; NiPtSi; Schottky barrier lowering

Indexed keywords

CONTACT RESISTIVITIES; DIFFUSION SOURCES; DOPANT SEGREGATION; HEAVILY DOPED; IV CHARACTERISTICS; LOW TEMPERATURES; NON-LINEARITY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER LOWERING; SCHOTTKY BARRIERS;

DOPING (ADDITIVES); PLATINUM; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SILICIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954142140     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2048992     Document Type: Article

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