Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Zhao, Q T ^a   Breuer, U ^a   Lenk, St ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON;

DISLOCATION LOOPS; NICKEL SILICIDATION; TEMPERATURE ANNEALS;

SULFUR;

EID: 34547600389     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759877     Document Type: Article

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