Ni silicide formation on epitaxial Si1 - YCy/(001) layers

Thin Solid Films

Volumn 518, Issue 24, 2010, Pages 7394-7397

  Lee, S W ^a   Huang, S H ^a   Cheng, S L ^a   Chen, P S ^b   Wu, W W ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Sheet resistance; Silicide; Thermal stability

Indexed keywords

C ATOMS; DEVICE APPLICATION; EPILAYERS GROWN; EPITAXIAL SI; NI SILICIDE; NISI FILMS; PROCESS WINDOW; SI(0 0 1); SILICIDATION; THERMAL STABILITY;

ELECTRIC RESISTANCE; EPILAYERS; GROWTH KINETICS; NICKEL COMPOUNDS; SHEET RESISTANCE; SILICIDES; SILICON; THERMODYNAMIC STABILITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956874136     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.05.015     Document Type: Conference Paper

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