Vertically integrated silicon-germanium nanowire field-effect transistor

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Rosaz, G ^a   Salem, B ^a   Pauc, N ^a   Potie A ^a   Gentile, P ^a   Baron, T ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE TRAPS; SHELL INTERFACE; SI-GE NANOWIRES; SILICON GERMANIUM; SUBTHRESHOLD SLOPE; VERTICAL CHANNELS;

GERMANIUM; MESFET DEVICES; SILICON ALLOYS;

NANOWIRES;

EID: 81155144578     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3660244     Document Type: Article

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