Growth and characterization of gold catalyzed siGe nanowires and alternative metal-catalyzed Si nanowires

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Potié, Alexis ^a,c   Baron, Thierry ^a   Dhalluin, Florian ^a   Rosaz, Guillaume ^a   Salem, Bassem ^a   Latu Romain, Laurence ^a   Kogelschatz, Martin ^a   Gentile, Pascal ^b   Oehler, Fabrice ^b   Montès, Laurent ^a   Kreisel, Jens ^d   Roussel, Hervé ^d  

^a CNRS   (France)

^b CEA GRENOBLE   (France)

^c IMEP LAHC   (France)

^d LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; CATALYSTS; CHLORINE COMPOUNDS; FLOW OF GASES; GOLD; NANOWIRES; NICKEL COMPOUNDS; SILICIDES; UNCERTAINTY ANALYSIS; CHARACTERIZATION; ELECTRIC PROPERTIES; GERMANIUM; PALLADIUM; PLATINUM; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON;

ALTERNATIVE METALS; EUTECTIC TEMPERATURE; GE CONCENTRATIONS; GROWTH CONDITIONS; MECHANICAL CHARACTERIZATIONS; NICKEL SILICIDE; SINGLE-POINT MEASUREMENT; SPRING CONSTANTS; 2D GROWTH; AFM; AFM TIP; AS-GROWN; AU CATALYSTS; GAS-FLOW RATIO; METAL CATALYST; NICKEL-SILICIDES; SI NANOWIRE; SI-GE NANOWIRES; SINGLE NW; XRD; YOUNG MODULUS;

SI-GE ALLOYS; SILICON ALLOYS;

SIGE;

EID: 82655168681     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-187     Document Type: Article

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