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Applied Physics Letters

Volumn 98, Issue 6, 2011, Pages

Ambient field effects on the current-voltage characteristics of nanowire field effect transistors

(3) Karmalkar, Shreepad a Maheswaran, K R K a Gurugubelli, Vijayakumar a

a INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CURRENT VOLTAGE CURVE; DRAIN CONTACTS; FIELD EFFECTS; FIELD LINES; HIGH VOLTAGE; MEASURED DATA; OUTPUT RESISTANCE; SATURATION CURRENT; SATURATION VOLTAGE; SIGNIFICANT IMPACTS;

CARRIER CONCENTRATION; DRAIN CURRENT; ELECTRIC RESISTANCE; ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; IMPACT RESISTANCE; NANOWIRES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79951783437 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3555426 Document Type: Article

Times cited : (3)

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