High-performance silicon nanowire field-effect transistor with silicided contacts

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Rosaz, G ^a   Salem, B ^a   Pauc, N ^a   Gentile, P ^a   Potie A ^a   Solanki, A ^a   Baron, T ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; BACK-GATE; BULK MATERIALS; CHANNEL CONDUCTANCE; CHEMICAL VAPOUR DEPOSITION; GATE INSULATOR; HYSTERETIC BEHAVIOUR; METALLIC CONTACTS; NICKEL SILICIDE; OPTIMIZED DEVICES; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON SUBSTRATES; SOURCE AND DRAINS; SURFACE PASSIVATION; UNDOPED SILICON; VAPOUR-LIQUID-SOLID MECHANISMS;

CHEMICAL VAPOR DEPOSITION; GOLD COATINGS; GOLD DEPOSITS; HOLE MOBILITY; NANOWIRES; OPTIMIZATION; PASSIVATION; SILICIDES; SILICON; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 80052016869     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085020     Document Type: Article

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