Indium oxide thin film transistors via reactive sputtering using metal targets

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 2, 2008, Pages 389-391

  Yao, Qijun ^a   Li, Dejie ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BI LAYERS; CHANNEL LAYERS; CHANNEL MOBILITIES; DEVICE PERFORMANCES; INDIUM OXIDES; METAL TARGETS; OPTIMAL DOSES; THIN LAYERS;

GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; REACTIVE SPUTTERING; TANTALUM; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS;

TRANSISTORS;

EID: 54849409562     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723462     Document Type: Article

References (12)

1. H. Hosono, J. Non-Cryst. Solids 352, 851 (2006).
2. L. Wang, M.-H. Yoon, G. Lu, Y. Yang, A. Facchetti, and T. J. Marks, Nature Mater. 5, 893 (2006).
3. E. M. C. Fortunato, P. M. C. Barquinha, C. M. B. G. Pimentel, M. F. Gonçalves, J. S. Marques, R. F. P. Martins, and L. M. N. Pereira, Appl. Phys. Lett. 85, 2541 (2004).
4. I.-D. Kim, M.-H. Lim, K. Kang, H.-G. Kim, and S.-Y. Choi, Appl. Phys. Lett. 89, 022905 (2006).
5. Y.-L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Pearton, I. I. Kravchenko, and J. M. Zavada, Appl. Phys. Lett. 90, 232103 (2007).
6. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).
7. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosonoc, Appl. Phys. Lett. 89, 112123 (2006).
8. A. Suresh, P. Wellenius, A. Dhawan, and J. Mutha, Appl. Phys. Lett. 90, 123512 (2007).
9. M. S. Oh, D. K. Hwang, K. Lee, S. Im, and S. Yi, Appl. Phys. Lett. 90, 173511 (2007).
10. M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, J. Phys. D, Appl. Phys. 40, 1335(2007).
11. X. Liu and D. Li, Appl. Surf. Sci. 253, 2143 (2006).
12. Q. J. Yao and D. J. Li, J. Non-Cryst. Solids 351, 3191 (2005).