High dielectric constant titanium oxide grown on amorphous silicon by metal-organic chemical vapour deposition

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages 604-607

  Lee, Ming Kwei ^a   Lee, Hung Chang ^a   Hsu, Chih Mine ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PERMITTIVITY; SURFACE ROUGHNESS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; HIGH DIELECTRIC CONSTANT TITANIUM OXIDE; TETRAISOPROPOXYTITANIUM;

TITANIUM OXIDES;

EID: 33645670089     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/006     Document Type: Article

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