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Volumn 110, Issue 7, 2011, Pages

Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

IN-SITU ELLIPSOMETRY; INDIUM CONTENT; ISLAND FORMATION; LAYER THICKNESS; METAL-ORGANIC VAPOUR PHASE EPITAXY; SURFACE TRANSITIONS;

EID: 80054992481     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3647782     Document Type: Article
Times cited : (12)

References (27)
  • 6
    • 67650453699 scopus 로고    scopus 로고
    • 10.1007/s00339-009-5186-2
    • C. Bayram and M. Razeghi, Appl. Phys. A 96, 403 (2009). 10.1007/s00339-009-5186-2
    • (2009) Appl. Phys. A , vol.96 , pp. 403
    • Bayram, C.1    Razeghi, M.2
  • 14
    • 0027904872 scopus 로고
    • As/Ga ratio dependence of Ga adatom incorporation kinetics at steps on vicinal GaAs(001) surfaces
    • DOI 10.1016/0022-0248(93)90668-M
    • T. Shitara, J. Zhang, J. H. Neave, and B. A. Joyce, J. Cryst. Growth 127, 494 (1993). 10.1016/0022-0248(93)90668-M (Pubitemid 23687375)
    • (1993) Journal of Crystal Growth , vol.127 , Issue.1-4 , pp. 494-498
    • Shitara, T.1    Zhang, J.2    Neave, J.H.3    Joyce, B.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.