Investigations of growth of self-assembled GaInN-GaN islands on SiC substrate by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 103-107

  Kobayashi, Yasuyuki ^a,b   Perez Solorzano, V ^a   Off, J ^a   Kuhn, B ^a   Grabeldinger H ^a   Schweizer, Heinz ^a   Scholz, Ferdinand ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Stranski Krastanow growth mode

Indexed keywords

ATOMIC FORCE MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; STRAIN; SUBSTRATES; SURFACE ACTIVE AGENTS; WETTING;

VAPOR PHASE RATIOS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036076921     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01485-9     Document Type: Article

References (10)