Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6997-6999

  Cobet, C ^a   Schmidtling, T ^a   Drago, M ^a   Wollschlager N ^a   Esser, N ^a   Richter, W ^a   Feenstra, R M ^b   Kampen, T U ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYERS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PAMBE);

ELLIPSOMETRY; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITROGEN; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES; SURFACES; VAPOR PRESSURE;

GALLIUM NITRIDE;

EID: 0345377451     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1623630     Document Type: Article

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