Two-terminal molecular memories from solution-deposited C60 films in vertical silicon nanogaps

ACS Nano

Volumn 4, Issue 4, 2010, Pages 1879-1888

  Corley, David A ^a   He, Tao ^a,b   Tour, James M ^a  

^a RICE UNIVERSITY   (United States)

^b NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

Author keywords

C60; Fullerene; Memory; Two terminal

Indexed keywords

C60; DEVICE DEGRADATION; ELEVATED TEMPERATURE; GOOD STABILITY; HIGH YIELD; I-V MEASUREMENTS; LOW OPERATING CURRENT; METAL MIGRATIONS; METHYLNAPHTHALENE; MOLECULAR DEVICE; MOLECULAR MEMORIES; NANO-GAP; ON/OFF RATIO; ROOM TEMPERATURE; SATURATED SOLUTIONS; SILICON NANOGAPS; SWITCHABLE; SWITCHING DEVICES;

FULLERENES; TOLUENE;

DISPLAY DEVICES;

EID: 77951711926     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn901566v     Document Type: Article

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