Endurance characteristics of amorphous-InGaZnO transparent flash memory with gold nanocrystal storage layer

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3940-3947

  Jang, Jaeman ^a   Park, Jae Chul ^b   Kong, Dongsik ^a   Kim, Dong Myong ^a   Lee, Jang Sik ^a   Sohn, Byeong Hyeok ^c   Cho, Il Hwan ^d   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Seoul National University   (South Korea)

^d Myong Ji University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); density of states (DOS); nonvolatile memory; thin film transistors (TFTs)

Indexed keywords

CHANNEL LAYERS; CYCLING EFFECTS; DENSITY OF STATE; DENSITY OF STATES (DOS); ENERGY-BAND BENDING; ERASE OPERATION; GATE INSULATOR; GOLD NANOCRYSTALS; INTERFACE-TRAP DENSITY; MEMORY DEVICE; MEMORY WINDOW; NON-VOLATILE; NONVOLATILE MEMORY; PROGRAM/ERASE; STORAGE LAYERS; TECHNOLOGY COMPUTER AIDED DESIGN;

AMORPHOUS FILMS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; GALLIUM; GOLD; INDIUM; NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC;

FLASH MEMORY;

EID: 80054907429     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2164252     Document Type: Article

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