AlGaN/GaN MOS-HEMTs with gate ZnO dielectric layer

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1220-1223

  Lee, Ching Ting ^a   Chiou, Ya Lan ^a   Lee, Chi Sen ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

AlGaN GaN metal oxide semiconductor HEMTs (MOS HEMTs); high frequency performance; low frequency noise; vapor cooling condensation system; zinc oxide (ZnO) insulator films

Indexed keywords

ALGAN/GAN; DIELECTRIC LAYER; DRAIN LAG; DRAIN-SOURCE CURRENTS; EXTRINSIC TRANSCONDUCTANCE; F-FUNCTION; GAIN CUTOFF FREQUENCY; GATE BIAS; GATE-LEAKAGE CURRENT; HIGH FREQUENCY PERFORMANCE; HIGH RESISTIVITY; INSULATOR FILMS; LINEAR REGION; LOW-FREQUENCY NOISE; MAXIMUM FREQUENCY; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; REVERSE GATE; ZNO;

CARRIER CONCENTRATION; CARRIER MOBILITY; CONDENSATION; COOLING; CUTOFF FREQUENCY; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DRAIN CURRENT; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; METAL RECOVERY; OXIDE FILMS; THERMAL NOISE; VAPORS; ZINC; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77958608437     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2066543     Document Type: Article

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