Thermal reliability and characterization of InGaP schottky contact with Ti/Pt/Au metals

Solid-State Electronics

Volumn 41, Issue 1, 1997, Pages 1-5

  Lee, Ching Ting ^a   Shiao, Hung Pin ^a   Yeh, Nien Tze ^a   Tsai, Chang Da ^a   Lyu, Yen Tang ^a   Tu, Yuan Kuang ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b Ministry of Transportation and Communications Taiwan   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; BAND STRUCTURE; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ETCHING; HEAT TREATMENT; INTERDIFFUSION (SOLIDS); METALS; SCHOTTKY BARRIER DIODES; THERMODYNAMIC STABILITY;

BUFFER OXIDE ETCHANT; INDIUM GALLIUM PHOSPHIDE; SCHOTTKY CONTACT; THERMAL RELIABILITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030785171     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00136-0     Document Type: Article

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