SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

Light output enhancement of GaN-based roughened LEDs using bias-assisted photoelectrochemical etching method

(3) Lee, Hsin Ying a Huang, Xiang Yan a Lee, Ching Ting a,b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; IMAGING TECHNIQUES; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; MICROSCOPIC EXAMINATION; ORGANIC LIGHT EMITTING DIODES (OLED); SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM;

ELECTRICAL PERFORMANCES; GAN-BASED LIGHT-EMITTING DIODES; LIGHT OUTPUT POWER; LIGHT-OUTPUT ENHANCEMENT; PEC ETCHING; PHOTO-ELECTROCHEMICAL ETCHING;

SURFACE MORPHOLOGY;

EID: 51849130654 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2956096 Document Type: Article

Times cited : (41)

References (14)

1
- 34547193872
- 0021-4922 10.1143/JJAP.45.L1111.
- M. Higashiwaki, T. Mimura, and T. Matsui, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.45.L1111, 45, L1111 (2006).
- (2006) Jpn. J. Appl. Phys., Part 2 , vol.45 , pp. 1111
- Higashiwaki, M.¹ Mimura, T.² Matsui, T.³

2
- 41749084393
- 0741-3106
- L. H. Huang, S. H. Yeh, C. T. Lee, H. Tang, J. Bardwell, and J. B. Webb, IEEE Electron Device Lett., 29, 284 (2008). 0741-3106
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 284
- Huang, L.H.¹ Yeh, S.H.² Lee, C.T.³ Tang, H.⁴ Bardwell, J.⁵ Webb, J.B.⁶

3
- 0029779805
- 0021-4922 10.1143/JJAP.35.L74.
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.35.L74, 35, L74 (1996).
- (1996) Jpn. J. Appl. Phys., Part 2 , vol.35 , pp. 74
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸

4
- 33847714925
- 1041-1135 10.1109/LPT.2006.883322.
- C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, IEEE Photon. Technol. Lett. 1041-1135 10.1109/LPT.2006.883322, 18, 2029 (2006).
- (2006) IEEE Photon. Technol. Lett. , vol.18 , pp. 2029
- Lee, C.T.¹ Yang, U.Z.² Lee, C.S.³ Chen, P.S.⁴

5
- 1542315187
- 0003-6951 10.1063/1.1645992.
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 0003-6951 10.1063/1.1645992, 84, 855 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 855
- Fujii, T.¹ Gao, Y.² Sharma, R.³ Hu, E.L.⁴ Denbaars, S.P.⁵ Nakamura, S.⁶

6
- 0347220994
- 0031-8965 10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO;2- G.
- K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, Phys. Status Solidi A 0031-8965 10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO;2-G, 188, 121 (2001).
- (2001) Phys. Status Solidi A , vol.188 , pp. 121
- Tadatomo, K.¹ Okagawa, H.² Ohuchi, Y.³ Tsunekawa, T.⁴ Jyouichi, T.⁵ Imada, Y.⁶ Kato, M.⁷ Kudo, H.⁸ Taguchi, T.⁹

7
- 0034227811
- 0018-9383 10.1109/16.848298.
- R. Windisch, B. Dutta, M. Kuijk, A. Knobloch, S. Meinlschmidt, S. Schoberth, P. Kiesel, G. Borghs, G. H. Döhler, and P. Heremans, IEEE Trans. Electron Devices 0018-9383 10.1109/16.848298, 47, 1492 (2000).
- (2000) IEEE Trans. Electron Devices , vol.47 , pp. 1492
- Windisch, R.¹ Dutta, B.² Kuijk, M.³ Knobloch, A.⁴ Meinlschmidt, S.⁵ Schoberth, S.⁶ Kiesel, P.⁷ Borghs, G.⁸ Döhler, G.H.⁹ Heremans, P.¹⁰

8
- 33645528374
- 0003-6951 10.1063/1.2189159.
- A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, and C. Weisbuch, Appl. Phys. Lett. 0003-6951 10.1063/1.2189159, 88, 133514 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 133514
- David, A.¹ Fujii, T.² Moran, B.³ Nakamura, S.⁴ Denbaars, S.P.⁵ Weisbuch, C.⁶

9
- 2442526351
- 0277-786X
- G. Parish, L. M. Watson, G. U. Membreno, and B. D. Nener, Proc. SPIE, 5276, 47 (2004). 0277-786X
- (2004) Proc. SPIE , vol.5276 , pp. 47
- Parish, G.¹ Watson, L.M.² Membreno, G.U.³ Nener, B.D.⁴

10
- 0037799126
- 0921-4526 10.1016/S0921-4526(03)00062-0.
- Z. Z. Chen, Z. X. Qin, Y. Z. Tong, X. M. Ding, X. D. Hu, T. J. Yu, Z. J. Yang, and G. Y. Zhang, Physica B 0921-4526 10.1016/S0921-4526(03)00062-0, 334, 188 (2003).
- (2003) Physica B , vol.334 , pp. 188
- Chen, Z.Z.¹ Qin, Z.X.² Tong, Y.Z.³ Ding, X.M.⁴ Hu, X.D.⁵ Yu, T.J.⁶ Yang, Z.J.⁷ Zhang, G.Y.⁸

11
- 0141718385
- 0021-4922 10.1143/JJAP.42.4207.
- C. Y. Fang, W. J. Huang, E. Y. Chang, C. F. Lin, and M. S. Feng, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.42.4207, 42, 4207 (2003).
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 4207
- Fang, C.Y.¹ Huang, W.J.² Chang, E.Y.³ Lin, C.F.⁴ Feng, M.S.⁵

12
- 17144412169
- 0361-5235 10.1007/s11664-005-0214-2.
- C. T. Lee, H. W. Chen, F. T. Hwang, and H. Y. Lee, J. Electron. Mater. 0361-5235 10.1007/s11664-005-0214-2, 34, 282 (2005).
- (2005) J. Electron. Mater. , vol.34 , pp. 282
- Lee, C.T.¹ Chen, H.W.² Hwang, F.T.³ Lee, H.Y.⁴

13
- 0003865110
- Elsevier Science, Amsterdam.
- H. O. Finklea, Semiconductor Electrodes, Elsevier Science, Amsterdam (1988).
- (1988) Semiconductor Electrodes
- Finklea, H.O.¹

14
- 0001076210
- 0003-6951 10.1063/1.126347.
- C. T. Lee and H. W. Kao, Appl. Phys. Lett. 0003-6951 10.1063/1.126347, 76, 2364 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2364
- Lee, C.T.¹ Kao, H.W.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.