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Volumn 143, Issue 1, 2009, Pages 192-197

Improved detection sensitivity of Pt/β-Ga2O3/GaN hydrogen sensor diode

Author keywords

Ga2O3; Hydrogen sensor; Metal reactive insulator semiconductor sensor diodes; Photoelectrochemical oxidation method

Indexed keywords

DETECTION SENSITIVITY; GAN LAYERS; HYDROGEN SENSOR; HYDROGEN-SENSING; OXIDE LAYER; PHOTOELECTROCHEMICAL OXIDATION METHODS; ROOM TEMPERATURE;

EID: 71849094329     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.08.040     Document Type: Article
Times cited : (60)

References (14)
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    • The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors
    • Eriksson M., Salomonsson A., and Lundstrom I. The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors. J. Appl. Phys. 98 (2005) 034903-1-034903-6
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    • The response of palladium metal-insulator-semiconductor devices to hydrogen-oxygen mixtures: comparisons between kinetic models and experiment
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    • 2O interactions with Pd(111) surface: a theoretical study of poisoning
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.