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Volumn 516, Issue 8, 2008, Pages 1755-1764

Transparent electronics: Schottky barrier and heterojunction considerations

Author keywords

Heterojunction; Interface; Oxide electronics; Schottky barrier; Transparent electronics; Transparent thin film transistor

Indexed keywords

CHARGE TRANSFER; ELECTROMAGNETIC WAVES; ENERGY GAP; FERMI LEVEL; HETEROJUNCTIONS;

EID: 38649140497     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.164     Document Type: Article
Times cited : (83)

References (43)
  • 16
    • 38649134925 scopus 로고    scopus 로고
    • note
    • It might seem puzzling that the positive microscopic dipole of Fig. 2 and the negative macroscopic dipole of Figs. 1 and 2) yield identical, rather than opposing barrier height trends. However, it is found for both Schottky barriers and heterojunctions that identical (opposing) macroscopic-microscopic dipole polarities produce opposing (identical) trends in terms of barrier height. Perhaps the easiest way to understand this subtle, counterintuitive trend is to employ an interfacial layer of atomic dimensions to account for the finite separation distance of the microscopic dipole (e.g., see Ref. [17]). Next, recognize that the separation of charge across this interfacial layer due to the presence of a microscopic dipole essentially takes charge away from the metal side and places it onto the semiconductor side of the interfacial layer. Since this charge is now in closer physical proximity to the semiconductor, its effect is enhanced, in terms of barrier height modification, in the same sense as original the macroscopic dipole.
  • 18
    • 38649138916 scopus 로고    scopus 로고
    • note
    • 1.
  • 20
    • 38649138135 scopus 로고    scopus 로고
    • note
    • 2 for each semiconductor interface capacitance to obtain Eq. (9).
  • 22
    • 38649100155 scopus 로고    scopus 로고
    • note
    • C is confusing, and is a consequence of the convergence of several energy band diagram sign conventions which are implicitly employed in Eqs. (7) and (11); electron energy is positive going upward, hole energy is positive going downward, electrostatic potential is positive going downward, and band gap is a positive quantity.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.