Dependence of GaN HEMT millimeter-wave performance on temperature

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 12, 2009, Pages 3205-3211

  Darwish, Ali M ^a   Huebschman, Benjamin D ^b   Viveiros, Edward ^b   Hung, H Alfred ^b  

^a AMERICAN UNIVERSITY IN CAIRO   (Egypt)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Aluminum gallium nitride (AlGaN); Gallium nitride (GaN); High electron mobility transistor (HEMT); Millimeter wave; Reliability; Thermal resistance; Wide bandgap

Indexed keywords

ALGAN; HIGH ELECTRON-MOBILITY TRANSISTOR (HEMT); THERMAL RESISTANCE; WIDE BANDGAP;

ALUMINUM; ALUMINUM GALLIUM NITRIDE; DRAIN CURRENT; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LASERS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TEMPERATURE DISTRIBUTION;

MILLIMETER WAVE DEVICES;

EID: 73049117443     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2034050     Document Type: Article

References (15)

1. T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. Den-Baars, J. Speck, and U. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications," IEEE Electron Device Lett., vol. 26, no. 11, pp. 781-783, Nov. 2005.
2. Y. Pei, R. Chu, N. A. Fichtenbaum, Z. Chen, D. Brown, L. Shen, S. Keller, S. P. DenBaars, and U. K. Mishra, "Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz," Japan. J. Appl. Phys., vol. 46, no. 45, pp. L1 087-L1 089, Dec. 2007.
3. A. Darwish, A. Bayba, and H. A. Hung, "Thermal resistance calculation of AlGaN-GaN devices," IEEE Trans. Microw. Theory Tech., vol. 52, no. 11, pp. 2611-2620, Nov. 2004.
4. A. M. Darwish, B. Huebschman, R. Del Rosario, E. Viverios, and H. A. Hung, "Temperature behavior of AlGaN/GaN on SiC HEMTs," in Proc. IEEE Compound Semiconduct. IC Symp, Palm Springs, CA, Oct. 31-Nov. 2, 2005, IFTH-55.
5. A. M. Darwish, B. Huebschman, E. Viveiros, and H. A. Hung, "The dependence of GaN HEMT's frequency figure of merit on temperature," presented at the IEEE Int. Microwave Symp., Boston, MA, Jun. 7-12, 2009, WEPC-1.
6. B. E. Foutz, "Electron transport and device modelling in group III nitrides," Ph.D. dissertation, Dept. Elect. Eng., Cornell Univ., Ithaca, NY, 2000.
7. C. H. Oxley, M. J. Uren, A. Coates, and D. G. Hayes, "On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 565-567, Mar. 2006.
8. M. Akita, S. Kishimoto, K. Maezawa, and T. Mizutani, "Evaluation of effective electron velocity in AlGaN/GaN HEMTs," IEEE Electron. Lett., vol. 36, no. 20, pp. 1736-1737, Sep. 2000.
9. F. Ren and J. C. Zolper, Wide Energy Bandgap Electronic Devices. River Edge, NJ: World Sci., 2003.
10. S. M. Sze and K. N. Kwok, Physics of Semiconductor Devices. Hoboken, NJ: Wiley, 2007.
11. P. Aaen, J. Pl'a, and J. Wood, Modeling and Characterization of RF and Microwave Power FETs. Cambridge, U.K.: Cambridge Univ. Press, 2007.
12. G. M. Dolny, G. E. Nostrand, and K. E. Hill, "The effect of temperature on lateral dmos transistors in a power IC technology," IEEE Trans. Electron Devices, vol. 39, no. 4, pp. 990-995, Apr. 1992.
13. A. Ahmed, S. Islam, and A. Anwar, "Temperature dependence of intermodulation and linearity in GaN based devices," presented at the IEEE MTT-S Int. Microw. Symp. Dig., 2001, Paper TUIF-47.
14. N. Adachi, Y. Tateno, S. Mizuno, A. Kawano, J. Nikaido, and S. Sano, "High temperature operation of AlGaN/GaN HEMT," in IEEE Int. Microw. Symp. Dig., Jun. 12-17, 2005, pp. 507-510.
15. K. Takagi, K. Masuda, Y. Kashiwabara, H. Sakurai, K. Matsushita, S. Takatsuka, H. Kawasaki, Y. Takada, and K. Tsuda, "X-band AlGaN/GaN HEMT with over 80 W output power," in IEEE Compound Semiconduct. Integr. Circuit Symp., 2006, pp. 265-268.