Comparing isoelectric point and surface composition of plasma modified native and deposited SiO2 films using contact angle titrations and X-ray photoelectron spectroscopy

Plasma Processes and Polymers

Volumn 8, Issue 10, 2011, Pages 951-964

  Trevino, Kristina J ^a   Shearer, Jeffrey C ^a   Tompkins, Brendan D ^a   Fisher, Ellen R ^a  

^a Veterinary Dentistry and Oral Surgery   (United States)

Author keywords

contact angle; isoelectric point; PECVD; plasma surface modification; SiO 2; XPS

Indexed keywords

AGING EFFECTS; CHEMICAL COMPOSITIONS; FILM FORMATIONS; GROWTH METHOD; HEXAMETHYLSILOXANE; HYDROPHILIC SURFACES; INDUCTIVELY COUPLED RF PLASMA; ISO-ELECTRIC POINTS; NATIVE OXIDE LAYER; PLASMA SURFACE MODIFICATIONS; PLASMA SYSTEMS; PLASMA TREATMENT; SIO 2;

CONTACT ANGLE; ELECTROMAGNETIC INDUCTION; FILM GROWTH; OXIDE FILMS; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; PLASMA APPLICATIONS; PLASMA THEORY; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE TREATMENT;

EID: 80054715213     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.201100010     Document Type: Article

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