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Volumn 43, Issue 9, 2011, Pages 1257-1270

Isoelectric points of plasma-modified and aged silicon oxynitride surfaces measured using contact angle titrations

Author keywords

isoelectric point; metal oxide; plasma surface modification; silicon oxynitride; XPS

Indexed keywords

ACID-BASE PROPERTY; ADHESION PROPERTIES; ADSORPTION BEHAVIOR; AGING EFFECTS; AR PLASMA TREATMENT; CHEMICAL CHANGE; CHEMICAL COMPOSITIONS; INDUCTIVELY COUPLED RF PLASMA; ISO-ELECTRIC POINTS; METAL OXIDE; METAL OXIDES; PHYSICAL STRUCTURES; PLASMA SURFACE MODIFICATION; PLASMA TREATMENT; SILICON OXYNITRIDE; SILICON OXYNITRIDES;

EID: 80051663251     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3707     Document Type: Article
Times cited : (13)

References (48)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.