Mechanisms of SiO 2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 1, 2004, Pages 201-213

  Zhang, Jianming ^a   Wavhal, Dattatray S ^a   Fisher, Ellen R ^a  

^a Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM DEPOSITION; PRECURSORS;

ADSORPTION; AROMATIC COMPOUNDS; CONTAMINATION; DESORPTION; ELLIPSOMETRY; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MASS SPECTROMETRY; PLASMA THEORY; SCANNING ELECTRON MICROSCOPY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 1242306888     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1635392     Document Type: Article

References (46)

1. D. A. DeCrosta, J. J. Hackenberg, and J. H. Linn, J. Electrochem. Soc. 143, 1079 (1996).
2. S. C. Deshmukh and E. S. Aydil, Appl. Phys. Lett. 65, 3185 (1994).
3. S. C. Deshmukh and E. S. Aydil, J. Vac. Sci. Technol. A 13, 2355 (1995).
4. I. T. Emesh, G. D'Asti, J. S. Mercier, and P. Leung, J. Electrochera. Soc. 136, 3404 (1989).
5. C. S. Pai and C. P. Chang, J. Appl. Phys. 68, 793 (1990).
6. G. Tochitani, M. Shimozuma, and H. Tagashira, J. Vac. Sci. Technol. A 11, 400 (1993).
7. P. J. Stoul and M. J. Kushner, J. Vac. Sci. Technol. A 11, 2562 (1993).
8. B. Gelernt, Selecting An Organosilicon Source For LPCVD Oxide Technical Article, J. C. Schumacher Co., Carlsbad, CA (1990).
9. C. S. Pai, Mater. Chem. Phys. 44, 1 (1996).
10. A. Lagendijk, U.S. Patent No. 5,028,566 (July 2, 1991).
11. P. D. Foo, A. S. Manocha, J. F. Miner, and C. S. Pai, U.S. Patent No. 5,124,014 (June 23, 1992).
12. K. Fujino, Y. Nishimoto, N. Tokumasu, and K. Maeda, Jpn. J. Appl. Phys., Part 1 33, 2019 (1994).
13. Y. Inoue and O. Takai, Plasma Sources Sci. Technol. 5, 339 (1995).
14. M. J. Loboda, J. A. Seifferly, C. M. Grove, and R. F. Schneider, Electro-chemical Proceedings 97, 443 (1997).
15. M. J. Loboda, Microelectron. Eng. 50, 15 (2000).
16. K. H. A. Bogart, N. F. Dalleska, G. R. Bogart, and E. R. Fisher, J. Vac. Sci. Technol. A 13, 476 (1995).
17. K. H. A. Bogart, S. K. Ramirez, L. A. Gonzales, G. R. Bogart, and E. R. Fisher, J. Vac. Sci. Technol. A 16, 3175 (1998).
18. C. P. Chang, C. S. Pai, and J. J. Hsieh, J. Appl. Phys. 67, 2119 (1990).
19. Y. Nishi, T. Funai, H. Izawa, T. Fujimoto, H. Morimoto, and M. Ishii, Jpn. J. Appl. Phys., Part 1 31, 4570 (1992).
20. G. B. Raupp and T. S. Cale, J. Vac. Sci. Technol. B 10, 37 (1992).
21. G. B. Raupp, D. A. Levedakis, and T. S. Cale, J. Vac. Sci. Technol. A 13, 676 (1995).
22. J. R. Bottin, P. R. McCurdy, and E. R. Fisher, Rev. Sci. Instrum. 68, 2149 (1997).
23. F. Fracassi, R. d'Agostino, and P. Favia, J. Electrochem. Soc. 139, 2636 (1992).
24. S. K. Ray, C. K. Maiti, S. K. Lahiri, and N. B. Chakrabarti, J. Vac. Sci. Technol. B 10, 1139 (1992).
25. S. Sahli, Y. Segui, R. Ramdani, and Z. Takkouk, Thin Solid Films 250, 206 (1994).
26. M. R. Alexander, R. D. Short, F. R. Jones, M. Stollenwerk, J. Zabold, and W. Michaeli, J. Mater. Sci. 31, 1879 (1996).
27. M. R. Alexander, R. D. Short, F. R. Jones, W. Michaeli, and C. J. Blom-field, Appl. Surf. Sci. 137, 179 (1999).
28. A. E. Lefohn, N. M. Mackie, and E. R. Fisher, Plasmas Polym. 3, 197 (1998).
29. P. R. McCurdy, J. M. Truitt, and E. R. Fisher, J. Vac. Sci. Technol. A 17, 2475 (1999).
30. K. L. Williams, I. T. Martin, and E. R. Fisher, J. Am. Soc. Mass Spectrom. 13, 518 (2002).
31. P. R. McCurdy, K. H. A. Bogart, N. F. Dalleska, and E. R. Fisher, Rev. Sci. Instrum. 68, 1684 (1997).
32. C. I. Butoi, M. L. Steen, J. R. D. Peers, and E. R. Fisher, J. Phys. Chem. B 105, 5957 (2001).
33. S. C. Deshmukh and E. S. Aydil, J. Vac. Sci. Technol. B 14, 738 (1996).
34. R. T. Conley, Infrared Spectroscopy (Allyn and Bacon, Boston, 1966).
35. S. P. Mukherjee and P. E. Evans, Thin Solid Films 14, 105 (1972).
36. N. Selamoglu, J. A. Mucha, D. E. Ibbotson, and D. L. Flamm, J. Vac. Sci. Technol. B 7, 1345 (1989).
37. T. W. Mountsier, U.S. Patent No. 6,054,206 (April 25, 2000).
38. F. Fracassi, R. d'Agostino, and P. Favia, J. Electrochem. Soc. 139, 2636 (1992).
39. C. Charles, P. Garcia, B. Grolleau, and G. Turban, J. Vac. Sci. Technol. A 10, 1407 (1992).
40. K. Aumaille, A. Granier, M. Schmidt, B. Grolleau, and C. Vallee, Plasma Sources Sci. Technol. 9, 331 (2000).
41. M. G. J. Veprek-Heijman and D. Boutard, J. Electrochem. Soc. 138, 2042 (1991).
42. K. H. A. Bogart, J. P. Gushing, and E. R. Fisher, Chem. Phys. Lett. 267, 377 (1997).
43. K. H. A. Bogart, J. P. Gushing, and E. R. Fisher, J. Phys. Chem. B 101, 10016 (1997).
44. J. Zhang and E. R. Fisher, J. Phys. Chem. B (submitted).
45. L. He, Y. Kurata, T. Inokuma, and S. Hasegawa, Appl. Phys. Lett. 63, 162 (1993).
46. R. K. Laxman, N. H. Hendricks, B. Arkles, and T. A. Tabler, Semicond. Int. 23, 95 (2000).