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Volumn 405, Issue 1, 2010, Pages 208-213

Interface interaction between thin films of transition metal compounds and silicon substrates across the native SiO2 layer

Author keywords

Laser ablation; Thin films; Transition metal

Indexed keywords

FILM-SUBSTRATE INTERFACES; HIGH DENSITY; HOPPING PROBABILITY; INTERFACE INTERACTION; INTERFACE RESISTANCE; IONIZED SPECIES; METAL ELECTRODES; NATIVE OXIDE LAYER; NEAR ROOM TEMPERATURE; RESISTIVE TRANSITION; SILICON SUBSTRATES; THREE ORDERS OF MAGNITUDE; TIO;

EID: 71549153497     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.059     Document Type: Article
Times cited : (11)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.