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Volumn 405, Issue 1, 2010, Pages 208-213
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Interface interaction between thin films of transition metal compounds and silicon substrates across the native SiO2 layer
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Author keywords
Laser ablation; Thin films; Transition metal
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Indexed keywords
FILM-SUBSTRATE INTERFACES;
HIGH DENSITY;
HOPPING PROBABILITY;
INTERFACE INTERACTION;
INTERFACE RESISTANCE;
IONIZED SPECIES;
METAL ELECTRODES;
NATIVE OXIDE LAYER;
NEAR ROOM TEMPERATURE;
RESISTIVE TRANSITION;
SILICON SUBSTRATES;
THREE ORDERS OF MAGNITUDE;
TIO;
COBALT;
COBALT COMPOUNDS;
ELECTRIC CONTACTORS;
FILM GROWTH;
LASER ABLATION;
LASER APPLICATIONS;
LASERS;
LITHOGRAPHY;
METAL IONS;
METALS;
OHMIC CONTACTS;
OXIDE FILMS;
PULSED LASER DEPOSITION;
SEMICONDUCTING GLASS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICIDES;
SILICON OXIDES;
SUBSTRATES;
THIN FILMS;
TRACE ANALYSIS;
METAL INSULATOR TRANSITION;
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EID: 71549153497
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2009.08.059 Document Type: Article |
Times cited : (11)
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References (19)
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