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Volumn 14, Issue 11, 2011, Pages

GaN epilayer grown on Ga2O3 sacrificial layer for chemical lift-off application

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; ELECTROPLATED COPPER; GAN EPILAYERS; GAN GROWTH; HYDROFLUORIC SOLUTION; LIFT-OFF APPLICATION; LIFT-OFF PROCESS; ORIENTATION RELATIONSHIP; SACRIFICIAL LAYER;

EID: 80053557481     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.002111esl     Document Type: Article
Times cited : (15)

References (27)
  • 2
    • 34547330446 scopus 로고    scopus 로고
    • Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes
    • DOI 10.1063/1.2749866
    • Y. S. Wu, J. H. Cheng, W. C. Peng, and H. Ouyang, Appl. Phys. Lett., 90, 251110 (2007). 10.1063/1.2749866 (Pubitemid 47141175)
    • (2007) Applied Physics Letters , vol.90 , Issue.25 , pp. 251110
    • Wu, Y.S.1    Cheng, J.-H.2    Peng, W.C.3    Ouyang, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.