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Electrochemical and Solid-State Letters

Volumn 14, Issue 7, 2011, Pages

Transferring thin film GaN LED Epi-structure to the Cu substrate by chemical lift-off technology

(4) Horng, Ray Hua a,b Pan, Chun Ting b Tsai, Tsung Yen b Wuu, Dong Sing b,c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

c DA YEH UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; CU SUBSTRATE; GAN EPILAYERS; GAN LEDS; GAN LIGHT-EMITTING DIODES; INTERFACE STRAIN; LASER LIFT-OFF TECHNIQUES; LATERAL EPITAXIAL OVERGROWTH; LIFT-OFF TECHNOLOGY; NARROW STRIPS; SACRIFICIAL LAYER; SAPPHIRE SUBSTRATES;

COPPER; EPITAXIAL GROWTH; HYDROFLUORIC ACID; LIGHT EMITTING DIODES; SAPPHIRE; SILICON COMPOUNDS; SOLIDS; SUBSTRATES;

GALLIUM NITRIDE;

EID: 79959568439 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3582352 Document Type: Article

Times cited : (9)

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