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Volumn 3, Issue , 2006, Pages 1388-1391
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Novel buffer layer for the growth of GaN on c-sapphire
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Author keywords
[No Author keywords available]
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Indexed keywords
GAN EPILAYERS;
LOW TEMPERATURE (LT);
POLARITY CONVERSION;
THERMAL EXPANSION COEFFICIENTS;
61.14.HG;
68.55.JK;
78.55.CR;
81.05.EA;
81.15.HI;
FILM GROWTH;
GALLIUM NITRIDE;
LATTICE CONSTANTS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
THERMAL EXPANSION;
X RAY DIFFRACTION;
BUFFER LAYERS;
EPITAXIAL GROWTH;
LATTICE MISMATCH;
MOLECULAR BEAM EPITAXY;
SAPPHIRE;
SEMICONDUCTOR QUANTUM WELLS;
SUPERCONDUCTING FILMS;
CHROMIUM COMPOUNDS;
GALLIUM NITRIDE;
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EID: 33746344674
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200565410 Document Type: Conference Paper |
Times cited : (12)
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References (12)
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