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Volumn 110, Issue 6, 2011, Pages

Structural analysis and electrical properties of pure Ge3N 4 dielectric layers formed by an atmospheric-pressure nitrogen plasma

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT SIMULATION; DIELECTRIC LAYER; FILM STRUCTURE; HIGH QUALITY; N-TYPE GE; PASSIVATION LAYER; PLASMA SYSTEMS; POST-OXIDATION; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY;

EID: 80053485430     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638133     Document Type: Article
Times cited : (11)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.