Detailed structural analysis and dielectric properties of silicon nitride film fabricated using pure nitrogen plasma generated near atmospheric pressure

Journal of Applied Physics

Volumn 100, Issue 7, 2006, Pages

  Hayakawa, Ryoma ^a   Nakae, Mari ^a   Yoshimura, Takeshi ^a   Ashida, Atsushi ^a   Fujimura, Norifumi ^a   Uehara, Tsuyoshi ^b   Tagawa, Masatoshi ^c   Teraoka, Yuden ^d  

^a Osaka Prefecture University   (Japan)

^b SEKISUI CHEMICAL CO LTD   (Japan)

^c KOBE UNIVERSITY   (Japan)

^d JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT-TUNNELING CURRENT SIMULATION; PLASMA IRRADIATION; SILICON SUBSTRATE; WENTZEL-KRAMERS-BRILLOUIN APPROXIMATION;

ATMOSPHERIC PRESSURE; CURRENT DENSITY; LEAKAGE CURRENTS; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 33750033659     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2353781     Document Type: Article

References (24)

1. K. Sekine, Y. Sito, M. Hirayama, and T. Ohmi, J. Vac. Sci. Technol. A 17, 3129 (1999).
2. Y. Saito, K. Sekine, M. Hirayama, and T. Ohmi, Jpn. J. Appl. Phys., Part 1 38, 2329 (1999).
3. S. Mikroulis, A. Georgakilas, A. Kostopoulos, V. Cimalla, and E. Dimakis, Appl. Phys. Lett. 80, 2886 (2002).
4. H. Ohata, M. Hori, and T. Goto, J. Appl. Phys. 90, 1955 (2001).
5. M. Moravej, X. Yang, G. R. Nowling, J. P. Chang, R. F. Hicks, and S. E. Babayan, J. Appl. Phys. 96, 7011 (2004).
6. M. Yuasa, U.S. Patent No. 5,968,377 (October 19th, 1999)
7. R. Hayakawa, T. Yoshimura, A. Ashida, H. Kitahata, M. Yuasa, and N. Fujimura, J. Appl. Phys. 96, 6094 (2004).
8. R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara, and N. Fujimura, Thin Solid Films 506-507, 423 (2006).
9. R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura, Trans. Mater. Res. Soc. Jpn. 831, 671 (2005).
10. R. Hayakawa, T. Yoshimura, M. Nakae, A. Ashida, T. Uehara, and N. Fujimura, Trans. Mater. Res. Soc. Jpn. 30, 217 (2005).
11. M. Nakae, R. Hayakawa, T. Yoshimura, A. Ashida, T. Uehara, and N. Fujimura, J. Appl. Phys. (in press).
12. J. R. Shallenberger, D. A. Cole, and S. W. Novak, J. Vac. Sci. Technol. A 17, 1086 (1999).
13. P. Cova, S. Poulin, O. Grenier, and R. A. Masut, J. Appl. Phys. 97, 73518 (2005).
14. M. P. Seah and W. A. Dench, Surf. Interface Anal. 1, 2 (1979).
15. H. W. Chen, D. Landheer, T. S. Chao, J. E. Hulse, and T. Y. Huang, J. Electrochem. Soc. 148, F140 (2001).
16. M. Houssa, M. Tuominen, M. Maili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000).
17. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963).
18. R. Karcher, L. Ley, and R. L. Johnson, Phys. Rev. B 30, 1896 (1984).
19. H. Itokawa, T. Maruyama, S. Miyazaki, and M. Hirose, Proceedings of the Solid State Device and Materials, Tokyo, 1999, p. 158.
20. T. Yoshida, D. Imafuku, J. L. Alay, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys., Part 2 34, L903 (1995).
21. G. Lucovsky, Y. Wu, H. Niimi, H. Yang, J. Keister, and J. E. Rowe, J. Vac. Sci. Technol. A 18, 1163 (2000).
22. K. Muraoka, K. Kurihara, N. Yasuda, and H. Satake, J. Appl. Phys. 94, 2038 (2003).
23. K. Yamasaki, M. Yoshida, and T. Sugano, Jpn. J. Appl. Phys. 18, 113 (1979).
24. S. M. Zee, Physics of Semiconductor Devices (Wiley, New York, 1969), p. 98.