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Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2415-2419

Characteristics of pure Ge3N4 dielectric layers formed by high-density plasma nitridation

(5) Kutsuki, Katsuhiro a Okamoto, Gaku a Hosoi, Takuji a Shimura, Takayoshi a Watanabe, Heiji a

a OSAKA UNIVERSITY (Japan)

Author keywords

Ge3N4; Insulator; MISFET; Plasma nitridation; Thermal stability

Indexed keywords

ANNEALING; DECOMPOSITION; DESORPTION; NITRIDATION; NITRIDES; PASSIVATION; PERMITTIVITY; PLASMA STABILITY; PLASMAS; PYROLYSIS; THERMODYNAMIC STABILITY;

GE3N4; INSULATOR; MISFET; PLASMA NITRIDATION; THERMAL STABILITY;

GERMANIUM;

EID: 54249105008 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.2415 Document Type: Article

Times cited : (29)

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