Formation processes of Ge3N4 films by radical nitridation and their electrical properties

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Kato, Kimihiko ^a   Kondo, Hiroki ^a   Sakashita, Mitsuo ^a   Zaima, Shigeaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Atomic layer deposition; Ge MOS; Ge3N4; Interface state density; Pr oxide; Radical nitridation; X ray photoelectron spectroscopy

Indexed keywords

ELECTRICAL PROPERTY; FORMATION PROCESS; FORMING GAS ANNEALING; GE MOS; INTERFACE STATE DENSITY; NITRIDATION TEMPERATURE; OXYNITRIDES; PR-OXIDE; RADICAL NITRIDATION; XPS ANALYSIS;

ATOMIC LAYER DEPOSITION; ATOMS; GERMANIUM; NITRIDATION; NITRIDES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 73649128560     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.094     Document Type: Article

References (9)

1. Saraswat K.C., et al. Microelec. Eng. 80 (2005) 15
2. Houssa M., et al. J. Non-Crystalline Sol. 351 (2005) 1902
3. Liu J., et al. Appl. Phys. Lett. 87 (2005) 011110
4. Kita K., et al. Jpn. J. Appl. Phys. 47 4 (2008) 2349
5. Elshocht S.V., et al. Appl. Phys. Lett. 85 (2004) 3824
6. Kamata Y., et al. Jpn. J. Appl. Phys. 44 (2005) 2323
7. Maeda T., et al. Appl. Phys. Lett. 85 (2004) 3181
8. Kondo H., et al. ECS Trans. 16 (2008) 717
9. Brown R.C., et al. J. Inorg. Nucl. Chem. 36 (1974) 2507