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Volumn 254, Issue 23, 2008, Pages 7933-7937
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Elimination of GeO 2 and Ge 3 N 4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates
a
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Author keywords
Band gaps GeO 2 and Ge 3 N 4; Interfacial transition regions; n MOS devices; n type Ge substrates; Visible and VUV SE; X ray absorption spectroscopy
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Indexed keywords
BONDING;
CMOS INTEGRATED CIRCUITS;
ENERGY GAP;
FIELD EFFECT TRANSISTORS;
GATE DIELECTRICS;
GERMANIUM OXIDES;
INTERFACES (MATERIALS);
LOW-K DIELECTRIC;
NITRIDES;
OXIDE SEMICONDUCTORS;
PLASMA DEVICES;
SILICON COMPOUNDS;
SUBSTRATES;
TRANSITION METAL COMPOUNDS;
TRANSITION METALS;
X RAY ABSORPTION SPECTROSCOPY;
COMPLEMENTARY METAL OXIDE SEMICONDUCTORS;
CONDUCTION BAND OFFSET;
ELECTRON TRAPPING;
EQUIVALENT OXIDE THICKNESS;
INTERFACIAL TRANSITION REGIONS;
N-TYPE GE;
PERFORMANCE AND RELIABILITIES;
REMOTE PLASMA PROCESSING;
MOS DEVICES;
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EID: 51249094513
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.03.157 Document Type: Article |
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Times cited : (26)
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References (20)
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