The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Nakae, Mari ^a   Hayakawa, Ryoma ^a   Yoshimura, Takeshi ^a   Fujimura, Norifumi ^a   Kunugi, Shunsuke ^b   Uehara, Tsuyoshi ^b  

^a Osaka Prefecture University   (Japan)

^b SEKISUI CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; FILM GROWTH; FILM THICKNESS; NITRIDATION; PLASMAS; SILICON NITRIDE;

ATMOSPHERIC PRESSURE PLASMA; NITRIDATION PRESSURE; RADIO FREQUENCY PLASMA SOURCES; TIME DEPENDENCE;

ULTRATHIN FILMS;

EID: 33847702510     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424501     Document Type: Article

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