Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 210-213

  Murin, L I ^a   Lindstrom J L ^b   Davies, G ^c   Markevich, V P ^a,d  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^b LUND UNIVERSITY   (Sweden)

^c KING'S COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Carbon; Irradiation; Oxygen; Silicon; Vibrational modes

Indexed keywords

ANNEALING; BAND STRUCTURE; RADIATION DAMAGE; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

CARBON-OXYGEN-RELATED DEFECTS; LOCAL VIBRATIONAL MODE (LVM) SPECTROSCOPY; VIBRATIONAL MODES;

CRYSTAL DEFECTS;

EID: 33751307984     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.029     Document Type: Article

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