Thermal storage of AlGaN/GaN high-electron-mobility transistors

IEEE Transactions on Device and Materials Reliability

Volumn 10, Issue 3, 2010, Pages 360-365

  Zhao, Miao ^a   Wang, Xinhua ^a   Liu, Xinyu ^a   Huang, Jun ^a   Zheng, Yingkui ^a   Wei, Ke ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); ohmic contacts; reliability; Schottky contact; thermal storage

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CONTACT STABILITY; ELECTRICAL CHARACTERISTIC; IDEALITY FACTORS; ISOLATION STRUCTURES; PROCESS IMPROVEMENT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; STORAGE TESTS; THERMAL PERFORMANCE; THERMAL STABILITY; THERMAL STORAGE; TI/AL/NI/AU; TRANSMISSION LINE MODELS;

DC POWER TRANSMISSION; ELECTRIC CONTACTORS; ELECTRONS; GALLIUM NITRIDE; HEAT STORAGE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957014807     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2010.2051671     Document Type: Article

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